Cleaving edge-emitting lasers from a wafer cell

Details Cleaving edge-emitting lasers from a wafer cell Cleaving edge-emitting lasers from a wafer cell

2008-02-22

2010-12-28

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000, C438S457000, C438S458000, C438S459000, C438S460000, C438S461000, C438S462000, C438S463000, C438S113000, C438S114000, C438S120000

Reexamination Certificate

active

07858493

ABSTRACT:
In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.

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