Cleaning wafer substrates of metal contamination while maintaini

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 6, 134 36, 134 42, 510175, 510165, 510167, 510421, 510435, C03C 2300, B08B 700, C11D 900, C11D 1700

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059893532

ABSTRACT:
Microelectronics wafer substrate surfaces are cleaned to remove metal contamination while maintaining wafer substrate surface smoothness by contacting the wafer substrate surfaces with an aqueous cleaning solution of an alkaline, metal ion-free base and a polyhydroxy compound containing from two to ten --OH groups and having the formula: ##STR1## wherein or in which --R--, --R.sup.1 --, --R.sup.2 -- and --R.sup.3 -- are alkylene radicals containing two to ten carbon atoms, x is a whole integer of from 1 to 4 and y is a whole integer of from 1 to 8, with the proviso that the number of carbon atoms in the polyhydroxy compound does not exceed ten, and wherein the water present in the aqueous cleaning solution is at least about 40% by weight of the cleaning composition.

REFERENCES:
patent: 4462871 (1984-07-01), Siegel
patent: 4675125 (1987-06-01), Sturwold
patent: 5098594 (1992-03-01), Doscher
patent: 5139607 (1992-08-01), Ward et al.
patent: 5348893 (1994-09-01), Yamagishi
Chem. Abstract 109:232701 Abstract of Chinese Patent Publication No. 86,102,808A (Dec. 2, 1987).
Chem. Abstract 111:67956 Abstract of Japanese Patent Publication No. 1-19,344 (Jan. 23, 1989).

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