Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-09-20
2005-09-20
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S706000, C438S714000, C438S745000, C134S001300
Reexamination Certificate
active
06946399
ABSTRACT:
A semiconductor deposition system in accordance with the present invention includes a CMP apparatus operative to planarize an active surface of a semiconductor wafer, and a wafer cleaner for cleaning wafer after the CMP process. The wafer cleaner preferably includes a wafer rotating mechanism, a steam inlet for applying steam to the active surface of the wafer as it is rotated and a liquid inlet for simultaneously applying a liquid to the back side surface of the wafer. A method for manufacturing an integrated circuit in accordance with the present invention includes subjecting an active surface of the wafer to a plurality of processes selected from a group including deposition, patterning, doping, planarization, ashing and etching, and steam cleaning the active surface at least once before, during, and after the plurality of processes. Preferably, an aqueous vapor phase is applied to the first surface of the wafer as an aqueous liquid phase is applied to the other surface of the wafer. A probe for introducing ultrasound vibration is placed in close proximity to the first surface and immersed in a condensate layer from the vapor phase. Spinning the wafer urges condensate to move toward the edge of the wafer as the wafer surfaces are cleaned.
REFERENCES:
patent: 6140744 (2000-10-01), Bran
patent: 6589878 (2003-07-01), Lorimer
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