Cleaning solution for cleaning a polishing pad used in a chemica

Details Cleaning solution for cleaning a polishing pad used in a chemica Cleaning solution for cleaning a polishing pad used in a chemica

1999-09-20

2000-12-05

Banks, Derris H.

Abrading

Abrading process

With tool treating or forming

451 60, 451444, B24B 100

Patent

active

061559121

ABSTRACT:
The present invention provides a cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing (CMP) process for polishing the surface of a semiconductor wafer. The cleaning solution comprises a potassium hydroxide (KOH) solution for cleaning off slurry remaining on the surface of the polishing pad, and a hydrogen peroxide (H.sub.2 O.sub.2) solution and ammonia water (NH.sub.4 OH) solution for removing abrasive debris remaining on the surface of the polishing pad after the chemical-mechanical polishing process.

REFERENCES:
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 6030932 (2000-02-01), Leon et al.
patent: 6068879 (2000-05-01), Pasch

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