Cleaning solution and method of cleaning a semiconductor...

Details Cleaning solution and method of cleaning a semiconductor... Cleaning solution and method of cleaning a semiconductor...

2005-04-05

2005-04-05

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

Reexamination Certificate

active

06875706

ABSTRACT:
In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

REFERENCES:
patent: 6095167 (2000-08-01), Florez
patent: 6584989 (2003-07-01), Taft et al.
patent: 6630074 (2003-10-01), Rath et al.
patent: 6664196 (2003-12-01), Wada et al.
patent: 20030209514 (2003-11-01), Ramachandran et al.
patent: 0 918 081 (1999-05-01), None
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patent: 2000-61342 (2000-10-01), None
English language of Abstract for Japanese Patent Publication No. JP10079366, filed Mar. 24, 1998.
English language of Abstract for Korean Patent Publication No. 2000-61342, filed Oct. 16, 2000.

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