Etching a substrate: processes – Gas phase and nongaseous phase etching on the same substrate
Reexamination Certificate
2008-05-06
2008-05-06
Norton, Nadine G. (Department: 1792)
Etching a substrate: processes
Gas phase and nongaseous phase etching on the same substrate
C216S058000, C216S041000, C438S706000, C252S079100, C252S079300, C252S079400
Reexamination Certificate
active
11115275
ABSTRACT:
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
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NIST; https://srmors.nist.gov/view—detail.cfm?srm=1065B; printed Oct. 5, 2005.
Sigma-aldrich;http://www.sigmaaldrich.com/catalog/search/ProductDetail/ALDRICH/377228.
Aoki Hidemitsu
Ikegami Kaoru
Ishikawa Norio
Ohwada Takuo
Suzuki Tatsuya
George Patricia A.
Kanto Kagaku Kabushiki Kaisha
Norton Nadine G.
Young & Thompson
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