Cleaning process for p-type silicon surface

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 4, 134 28, 134 29, 134 30, 148 15, B08B 704

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042643740

ABSTRACT:
A cleaning process for a silicon surface, especially a p-type silicon surface. The surface is exposed to HF/H.sub.2 O fumes, thereby obtaining a hexafluosilicic acid film on the surface. The exposed surface is then treated with a water-based, oxidizing, non-silicon-etchant cleaning agent. There is no intermediate rinse between the latter two steps.

REFERENCES:
patent: 2948642 (1960-08-01), MacDonald
Kern and Puotinen, "Cleaning Solutions Based on Hydrogen Peroxide . . .", RCA Review, Jun. 1970, pp. 187-206.
Henderson, "Silicon Cleaning With Hydrogen Peroxide Solutions . . .", Journal of the Electrochemical Society, Jun. 1972, pp. 772-775.
Raider, Flitsch, and Palmer, "Oxide Growth of Etched Silicon . . .", Journal of the Electrochemical Society, Mar. 1975, pp. 413-418.
Beyer and Whitehill: ll, "Etching of SiO.sub.2 in Gases HF/H.sub.2 O", IBM Technical Disclosure Bulletin, vol. 19, No. 7, Dec. 1976, p. 2513.
Beyer, "Silicon Surface Cleaning Process", IBM Technical Disclosure Bulletin, vol. 20, No. 5, Oct. 1977, pp. 1746-1747.
Meek, Buck and Gibbon, "Silicon Surface Contamination . . .", Journal of the Electrochemical Society, Sep. 1973, pp. 1241-1242.

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