Cleaning process for harmful gas

Details Cleaning process for harmful gas Cleaning process for harmful gas

1998-04-17

1999-08-10

Nguyen, Ngoc-Yen

Chemistry of inorganic compounds

Modifying or removing component of normally gaseous mixture

Nitrogen or nitrogenous component

423240S, 423241, B01J 800, B01D 5354, B01D 5368

Patent

active

059355409

ABSTRACT:
There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gas containing at least one member selected from the group consisting of nitrogen fluorides, tungsten fluorides, silicon fluorides, hydrogen fluoride and fluorine, especially nitrogen trifluoride into contact with a cleaning agent comprising stannous oxide as an effective ingredient at a temperature of 200.degree. C. at the lowest. The above process makes it possible to clean the harmful gas in a high performance at a relatively low temperature without by-producing a harmful gas or a gas with a fear of causing environmental pollution.

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patent: 5283041 (1994-02-01), Nguyen et al.
patent: 5417948 (1995-05-01), Iwata et al.
English abstract for JP 61-287,424, Dec. 1986.
English abstract for JP 61-204,025, Sep. 1986.
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Derwent Abstracts, AN 96-304414, XP002081730 of JP 08 131764 (Babcock-Hitachi KK), May 28, 1996.
Derwent Abstracts, AN 88-025500, XP002081731 of JP 62 286523 (Nippon Pionics KK), Dec. 12, 1987.
Derwent Abstracts, AN 82-32395E, XP002081732 of JP 50 119765 (Nichicon Capacitor Ltd), Sep. 19, 1975.

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