Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-08-28
1998-05-19
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 75, 216 78, 134 11, H01L 21302
Patent
active
057535671
ABSTRACT:
A process for removing metallic contaminants from the surface of chunk or granular polycrystalline silicon is disclosed. The metallic contaminants are exposed to a gas-phase halogen etchant which reacts with the metallic contaminants to form metal halides. The gas-phase halogen etchant is preferably a halogen plasma. The metal halides are volatilized into an atmosphere adjacent to the surface of the polycrystalline silicon, and purged therefrom. The cleaned polycrystalline silicon is used to prepare a mass of molten silicon for use in producing a single crystal silicon ingot by the Czochralski method.
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Banan Mohsen
Hansen Richard L.
Alanko Anita
Breneman R. Bruce
MEMC Electronic Materials , Inc.
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