Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1997-09-03
2000-05-09
Warden, Jill
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
134 1, 134 26, 134 86, 134902, 134 28, B08R 700
Patent
active
060589450
ABSTRACT:
Provided is a suitable cleaning method of a porous semiconductor substrate without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.
REFERENCES:
patent: 3893869 (1975-07-01), Mayer et al.
patent: 4927781 (1990-05-01), Miller
patent: 5331180 (1994-07-01), Yamada et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5427977 (1995-06-01), Yamada
patent: 5510633 (1996-04-01), Orlowski et al.
patent: 5626159 (1997-05-01), Erk et al.
Handbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, pp. 48-56, 76-85, 134-142, 390-394 and 597-598, 1993.
S. Ojima et al., "Advanced Wet Cleaning of Wafers with Reduced Chemicals and DI Water Consumption", research report IEICE, SDM 95-86, ICD 95-95, pp. 105-112, Jul. 1995.
M. Morita and T. Ohmi, "Current Understanding of the Native Oxides", abstract, Ultra Clean Technology, vol. 1, No. 1, pp. 22-28, 1989.
T. Yonehara et al., "Epitaxial layer transfer by bond and etch back of porous Si," Applied Physics Letters 64 (16), Apr. 18, 1994.
O.I. Babikov, "Ultrasonic Modular Units for Cleaning Semiconductor Structures in Deionized Water With Increased Intensity of the Piezoceramic Transducers", Elektrotekhnika, vol. 62, No. 6, pp. 74-77, 1991.
Patent Abstracts of Japan, vol. 15, No. 130 (E-1051), Mar. 29, 1991, corresponding to JP 03-014230.
Patent Abstracts of Japan, vol. 12, No. 049 (E-582), Feb. 13, 1988, corresponding to JP 62-198127.
Patent Abstracts of Japan, vol. 18, No. 651 (C-1285), Dec. 9, 1994, corresponding to JP 06-254521.
Patent Abstracts of Japan, vol. 16, No. 465 (E-1270), Sep. 28, 1992, corresponding to JP 04-165620.
Patent Abstracts of Japan, vol. 16, No. 420 (E-1259), Sep. 4, 1992, corresponding to JP 04-144131.
Patent Abstracts of Japan, vol. 18, No. 684 (E-1650), Dec. 22, 1994, corresponding to JP 06-275866.
Patent Abstracts of Japan, vol. 18, No. 493 (E-1606), Sep. 14, 1994, corresponding to JP 06-168660.
Fujiyama Yasutomo
Kumomi Hideya
Canon Kabushiki Kaisha
Markoff Alexander
Warden Jill
LandOfFree
Cleaning methods of porous surface and semiconductor surface does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cleaning methods of porous surface and semiconductor surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cleaning methods of porous surface and semiconductor surface will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1055018