Cleaning methods of porous surface and semiconductor surface

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

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134 1, 134 26, 134 86, 134902, 134 28, B08R 700

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060589450

ABSTRACT:
Provided is a suitable cleaning method of a porous semiconductor substrate without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.

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