Cleaning method of semiconductor manufacturing apparatus and...

Details Cleaning method of semiconductor manufacturing apparatus and... Cleaning method of semiconductor manufacturing apparatus and...

2006-09-01

2009-12-15

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Hollow work, internal surface treatment

C134S026000, C134S030000, C134S036000

Reexamination Certificate

active

07631651

ABSTRACT:
A cleaning method of a semiconductor manufacturing apparatus begins by introducing film forming gas include reaction gas not forming a film by itself to reaction chamber to form the film on a semiconductor substrate, decreasing pressure of the reaction chamber, solidifying or liquefying the reaction gas to form particles by using small-particles in the reaction chamber as cores, and exhausting the particles from the reaction chamber. Using this method, foreign small-particles can easily be removed from the apparatus and suppress any possible contamination of semiconductor substrates to be processed.

REFERENCES:
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 6974781 (2005-12-01), Timmermans et al.
patent: 2006/0144234 (2006-07-01), Komatsu
patent: 6-252063 (1994-09-01), None
patent: 8-172083 (1996-07-01), None
patent: 11-54485 (1999-02-01), None

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