Cleaning method, method for fabricating semiconductor device...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S754000, C438S756000

Reexamination Certificate

active

06998352

ABSTRACT:
A cleaning solution having an oxidation-reduction potential lower than that of pure water and a pH value of 4 or below is used to remove metal contamination, thereby efficiently removing the metal contamination adhered onto a surface of a substrate without damaging an underlayer.

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patent: 6387190 (2002-05-01), Aoki et al.
patent: 6399552 (2002-06-01), Lee et al.
patent: 6423148 (2002-07-01), Aoki
patent: 10-041262 (1998-02-01), None
patent: 11-162917 (1999-06-01), None
patent: 2000-12494 (2000-01-01), None
patent: 2002-69495 (2002-03-01), None

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