Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-02-13
2009-12-08
Norton, Nadine G (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S692000, C438S751000, C438S754000, C134S003000, C134S006000, C134S026000, C134S029000
Reexamination Certificate
active
07629265
ABSTRACT:
A novel cleaning method for preventing defects and particles resulting from post tungsten etch back or tungsten chemical mechanical polish is provided. The cleaning method comprises providing a stack structure of a semiconductor device including a tungsten plug in a dielectric layer. The tungsten plug has a top excess portion. A surface of the stack structure is then contacted with a cleaning solution comprising hydrogen peroxide. Next, the surface of the stack structure is contacted with dilute hydrofluoric acid. The cleaning solution and hydrofluoric acid are capable of removing the top excess portion and particles on the surface of the stack structure.
REFERENCES:
patent: 2004/0150054 (2004-08-01), Hirano
patent: 2005/0130414 (2005-06-01), Choi et al.
patent: 2005/0250316 (2005-11-01), Choi et al.
patent: 2006/0054595 (2006-03-01), Starzynski
Chen Kuang-Chao
Luoh Tuung
Wu Chia-Wei
Yang Ling-Wuu
Baker & McKenzie LLP
Dahimene Mahmoud
Macronix International Co. Ltd.
Norton Nadine G
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