Cleaning method for semiconductor substrate

Details Cleaning method for semiconductor substrate Cleaning method for semiconductor substrate

1994-12-21

1995-12-05

Silbaugh, Jan H.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 28, 134 41, C23G 102, B08B 308

Patent

active

054725135

ABSTRACT:
In a cleaning method, two kinds of cleaning solutions, one of which is acid solution of about pH 2 or less (first cleaning solution) and other of which is acid solution of about pH 3 to 4 (second cleaning solution), are successively used to clean a semiconductor substrate. In a first cleaning step, the semiconductor substrate is cleaned with the first cleaning solution to transform metals on the surface of the semiconductor substrate to metallic complex salts, and then in a second cleaning step the semiconductor substrate is cleaned with the second cleaning solution to transfer the metallic complex salts adsorbed on the surface of the semiconductor substrate into the second cleaning solution by osmotic pressure due to the difference in pH between the first and second cleaning solutions.

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