Cleaning method for peeling and removing photoresist

Details Cleaning method for peeling and removing photoresist Cleaning method for peeling and removing photoresist

1997-01-10

1999-01-12

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 3, 134 28, B08B 312

Patent

active

058581065

ABSTRACT:
A cleaning method for peeling and removing photoresists from a semiconductor by applying ultrasound to a cleaning solution comprising a mixture of an organic solvent diluted with pure water and halogenated alkali metal salts, hydrofluoric acid, or ammonium fluoride. The cleaning method removes organic film such as a photoresist or the like at room temperature, not by dissolving, but rather by peeling. The cleaning liquid does not degrade over a long period of time and, moreover, has a strong cleaning effect yet chemical vapors and water vapors are essentially not generated.

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