Cleaning method and etching method

Details Cleaning method and etching method Cleaning method and etching method

2005-09-06

2005-09-06

Carrillo, Sharidan (Department: 1746)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S021000, C134S022100, C134S022110, C134S022120, C134S026000, C134S036000, C134S031000, C134S034000, C134S037000, C134S042000, C134S030000

Reexamination Certificate

active

06939409

ABSTRACT:
A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2formed on the silicon pieces can be removed, and XeF2can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.

REFERENCES:
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patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 6124211 (2000-09-01), Butterbaugh et al.
patent: 6409876 (2002-06-01), McQuarrie et al.
patent: 2002/0007246 (2002-01-01), Baur et al.
patent: 2002/0011463 (2002-01-01), Buskirk et al.
patent: 2004/0069318 (2004-04-01), Kanayama et al.
patent: 04-096222 (1992-03-01), None
patent: 07-122539 (1995-05-01), None
patent: WO-98/47172 (1998-10-01), None
Patent Abstracts of Japan for JP07-122539 published on May 12, 1995.
Patent Abstracts of Japan for JP04-096222 published on Mar. 27 1992.

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