Cleaning compositions for removing etching residue and method of

Compositions – Fluent dielectric – N-containing

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252DIG11, 134 2, 134 40, C11D 330, C11D 333

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active

053343328

ABSTRACT:
A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

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