Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-09-01
2000-12-19
Elms, Richard
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
436 5, 510175, 134 2, H01L 21302
Patent
active
061627380
ABSTRACT:
A cleaning method includes providing a stack including at least a layer of Ta.sub.2 O.sub.5 and a layer of conductive material. The stack includes a conductive etch residue on at least portions thereof. A dilute aqueous composition is provided including hydrochloric acid (HCl), hydrogen peroxide (H.sub.2 O.sub.2), and deionized water (H.sub.2 O). The stack is exposed to the dilute aqueous composition to remove the conductive etch residue. The dilute aqueous composition may include a ratio of H.sub.2 O:H.sub.2 O.sub.2 :HCl in a range of about 100:1:0.5 to about 100:10:5. A cleaning composition for use in the method includes a dilute aqueous composition including hydrochloric acid (HCl), hydrogen peroxide (H.sub.2 O.sub.2), and deionized water (H.sub.2 O).
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Chen Gary
Li Li
Elms Richard
Luu Pho
Micro)n Technology, Inc.
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