Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-04-24
1999-06-01
Breneman, Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438711, 438727, H01L 21302
Patent
active
059083190
ABSTRACT:
In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.
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Bersin Richard L.
Xu Han
Alanko Anita
Breneman Bruce
Ulvac Technologies, Inc.
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