Cleaning and etching methods and their apparatuses

Details Cleaning and etching methods and their apparatuses Cleaning and etching methods and their apparatuses

2005-07-05

2005-07-05

Carrillo, Sharidan (Department: 1746)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S021000, C134S022100, C134S022110, C134S022120, C134S026000, C134S031000, C134S034000, C134S036000, C134S037000, C134S042000, C134S030000

Reexamination Certificate

active

06913653

ABSTRACT:
A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2formed on the surface of silicon small particles can be removed, and XeF2directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

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