Clean for high density capacitors

Details Clean for high density capacitors Clean for high density capacitors

2007-08-07

2007-08-07

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Forming or treating material useful in a capacitor

C134S001100, C438S710000, C257SE21009

Reexamination Certificate

active

10269498

ABSTRACT:
One aspect of the invention relates to a method of cleaning high density capacitors. According to the method, the capacitors are cleaned with a plasma that includes fluorine-containing radicals. The plasma removes a small layer from the capacitors, including their sidewalls, and thereby removes surface contaminants. The method is effective even when the capacitors include hard-to-etch dielectric materials, such as tantalum and hafnium oxides. In a preferred embodiment, the plasma clean is combined with a solvent clean.

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patent: 5843821 (1998-12-01), Tseng
patent: 5879986 (1999-03-01), Sung
patent: 6100135 (2000-08-01), Wu
patent: 6348386 (2002-02-01), Gilmer
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6486530 (2002-11-01), Sasagawa et al.
patent: 6656748 (2003-12-01), Hall et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0004279 (2002-01-01), Agarwal et al.

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