Metal treatment – Barrier layer stock material – p-n type
Patent
1993-03-09
1994-03-22
Kunemund, Robert
Metal treatment
Barrier layer stock material, p-n type
252 623GA, 252 623E, H01F 100
Patent
active
052960480
ABSTRACT:
A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.
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Chang Leroy L.
Esaki Leo
Munekata Hiro
Ohno Hideo
vonMolnar Stephan
International Business Machines - Corporation
Kunemund Robert
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