Class E power amplifier circuit and associated transmitter...

Amplifiers – Modulator-demodulator-type amplifier

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C330S251000, C330S20700P

Reexamination Certificate

active

11065640

ABSTRACT:
A class E power amplifier circuit comprising an active device, a DC blocking element and an oscillating element, wherein the oscillating element is driven by a voltage signal.

REFERENCES:
patent: 4717884 (1988-01-01), Mitzlaff
patent: 5276912 (1994-01-01), Siwiak et al.
patent: 5535438 (1996-07-01), Sevic
patent: 5926093 (1999-07-01), Bowers et al.
patent: 5939941 (1999-08-01), Nair et al.
patent: 6232841 (2001-05-01), Bartlett et al.
patent: 6724255 (2004-04-01), Kee et al.
patent: 6816016 (2004-11-01), Sander et al.
patent: 6977546 (2005-12-01), Stapleton
patent: 7046088 (2006-05-01), Ziegler
Carrara, F., et al.: Institute of Electrical and Electronics Engineers: “High Performance Silicon Bipolar Power Amplifier for 1.8 GHZ Applications.” 2002 IEEE MTT-S International Microwave Symposium Digest. (IMS 2002). Seattle, WA, Jun. 2-7, 20002, IEEE MTT-S, International Microwave Symposium, New York, NY: IEEE US, vol. 2 of 4, Jun. 2, 2002, pp. 1015-1018.
Davis, J. F., et al.: “A low-cost class-E amplifier with sine-wave drive.” Microwave Symposium Digest, 1998 IEEE MTT-S International Baltimore, MD, USA, Jun. 7-12, 1998, New York, NY, USA, IEEE, US, vol. 2, Jun. 7, 1998, pp. 1113-1116.
Deshpande, M., et al.: “Heterojunction Interband Tunneling Fets: Optimization and Use in Amplifier Circuits.” Compound Semiconductors 1999. Proceedings of the 26thInternational Symposium on Compound Semiconductors. Berlin, Aug. 22-26, 1999, Institute of Physics Conference Series, London: IOP, GB, vol. NR. 166, Aug. 22, 1999, pp. 351-354.
Gupta, R., et al.: “Fully Monolithic CMOS RF Power Amplifiers: Recent Advances.” IEEE Communications Magazine, IEEE Service Center. Piscataway, NJ US, vol. 37, No. 4, Apr. 1999, pp. 94-98.
Raab, F.H., et al.: “Class-F Power Amplifiers With Maximally Falt Waveform.” IEEE Transactions on Microwave Theory and Techniques, IEEE, Inc., New York, US, vol. 45, No. 11, Nov. 1997, pp. 2007-2012.
Tan, Y., et al.: “A 900-MHZ Fully Integrated SOI Power Amplifier for Single-Chip Wireless Transceiver Applications.” IEEE Journal of Solid-State Circuits, IEEE Inc., New York, US, vol. 35, No. 10, Oct. 2000, pp. 1481-1486.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Class E power amplifier circuit and associated transmitter... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Class E power amplifier circuit and associated transmitter..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Class E power amplifier circuit and associated transmitter... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3941228

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.