Class AB enhanced transconductance source follower

Details Class AB enhanced transconductance source follower Class AB enhanced transconductance source follower

2008-05-06

2008-05-06

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including field effect transistor

C330S311000

Reexamination Certificate

active

11612354

ABSTRACT:
A low voltage, high bandwidth, enhanced transconductance, source follower circuit constructed from MOS FET devices, which operates in a class AB mode. The drain current of the source follower is sensed with a folded cascode device. The sensed current is multiplied by a common source device of same type (NMOS or PMOS) as the source follower, and directed to the output load. Over limit current load at the source follower drain is sensed by a common source device of the opposite type (NMOS or PMOS), which also supplies the necessary extra current to the output load. This allows the device to supply significantly more than the quiescent current in both sourcing and sinking the output. Average power consumption for driving a given load is significantly reduced, while maintaining the large bandwidth of traditional source follower designs, and the capability for use in either voltage regulators or in a current conveyor.

REFERENCES:
patent: 6590453 (2003-07-01), Tran et al.

Affiliated with

Also associated with

Rating

Class AB enhanced transconductance source follower does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Class AB enhanced transconductance source follower, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Class AB enhanced transconductance source follower will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3929640