Clamp disposed at edge of a dielectric structure in a semiconduc

Details Clamp disposed at edge of a dielectric structure in a semiconduc Clamp disposed at edge of a dielectric structure in a semiconduc

1997-03-31

1998-09-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257635, 257744, H01L 2358

Patent

active

058048693

ABSTRACT:
A semiconductor structure (10) uses a clamp (16) disposed at an edge (27) of a dielectric structure (14) in a semiconductor device. The clamp substantially reduces the separation or peeling of the dielectric structure or layer away from the underlying semiconductor material (20,24). The clamp also provides the benefit of protecting the interface between the dielectric layer and the underlying semiconductor material from chemical or moisture attack, either during later processing or after final manufacture. Such chemical or moisture attack and internal film stress are factors leading to separation of the dielectric film from the underlying semiconductor material. The clamp is useful, for example, in preventing separation of silicon nitride or oxide passivation from gallium arsenide substrates in power rectifier diodes.

REFERENCES:
patent: 3763408 (1973-10-01), Kano et al.
patent: 5621227 (1997-04-01), Joshi
"Semiconductor Power Devices, Physics of Operation and Fabrication Technology"; Sorab K. Ghandhi; John Wiley & Sons, Inc.; 1977; pp. 70-72.

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