Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-09-12
2006-09-12
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S652000, C438S653000, C438S666000, C257SE21002
Reexamination Certificate
active
07105363
ABSTRACT:
A method for fabricating a cladded conductor (42) for use in a magnetoelectronics device is provided. The method includes providing a substrate (10) and forming a conductive barrier layer (12) overlying the substrate (10). A dielectric layer (16) is formed overlying the conductive barrier layer (12) and a conducting line (20) is formed within a portion of the dielectric layer (16). The dielectric layer (16) is removed and a flux concentrator (30) is formed overlying the conducting line (20).
REFERENCES:
patent: 6211090 (2001-04-01), Durlam et al.
patent: 2003/0170976 (2003-09-01), Molla et al.
Baker Jeffrey H.
Butcher Brian R.
D'Urso John J.
Deherrera Mark F.
Durlam Mark A.
Freescale Semiconductor Inc.
Ingrassia, Fisher&Lorenz
Novacek Christy
Smith Zandra V.
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