Cladded conductor for use in a magnetoelectronics device and...

Details Cladded conductor for use in a magnetoelectronics device and... Cladded conductor for use in a magnetoelectronics device and...

2005-04-26

2005-04-26

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S252000

Reexamination Certificate

active

06885074

ABSTRACT:
A method for fabricating a cladded conductor (42) for use in a magnetoelectronics device is provided. The method includes providing a substrate (10) and forming a conductive barrier layer (12) overlying the substrate (10). A dielectric layer (16) is formed overlying the conductive barrier layer (12) and a conducting line (20) is formed within a portion of the dielectric layer (16). The dielectric layer (16) is removed and a flux concentrator (30) is formed overlying the conducting line (20).

REFERENCES:
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6080658 (2000-06-01), Huang et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6413788 (2002-07-01), Tuttle
patent: 6417561 (2002-07-01), Tuttle
patent: 6436816 (2002-08-01), Lee et al.
patent: 20030134513 (2003-07-01), Li et al.
patent: 20030170976 (2003-09-01), Molla et al.
patent: 20040007751 (2004-01-01), Mattson

Affiliated with

Also associated with

Rating

Cladded conductor for use in a magnetoelectronics device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cladded conductor for use in a magnetoelectronics device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cladded conductor for use in a magnetoelectronics device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3420158