Clad superlattice semiconductor laser

Details Clad superlattice semiconductor laser Clad superlattice semiconductor laser

1985-05-13

1988-03-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, 372 46, H01S 319, H01L 2712

Patent

active

047317892

ABSTRACT:
A clad superlattice semiconductor laser is fabricated utilizing Impurity Induced Disordering (IID) techniques that provides (1) reduction of free carrier absorption in the optical cavity and (2) the ability to selectively vary the amount of index guiding in the optical waveguide independent of the properties of the electron confining multiquantum well structure. The clad superlattice semiconductor laser provides for the novel inclusion of a superlattice in a cladding layer or region of the laser structure. An effective index waveguide can be realized by selectively disordering the cladding superlattice in regions adjacent to the formed index guide type optical cavity, as long as the superlattice is designed so that the established optical mode significantly overlaps with the disordered superlattice cladding regions, i.e., the evanescent wave propagating in the laser cavity overlaps into regions of the disordered superlattice.

REFERENCES:
patent: 4184171 (1980-01-01), Panish
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
T. Fukuzawa et al., "GaAlAs Buried Multiquantum Well . . . Disordering", APL, vol. 45(1), pp. 1-3 (Jul. 1, 1984).
W. D. Laidig et al., "Embedded-Mirror Semiconductor Laser", APL, vol. 45(5), pp. 485-487 (Sep. 1, 1984).
W. D. Laidig et al., "Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion", APL, vol. 38(1), pp. 776-778 (May 15, 1981).
W. D. Laidig et al., "Induced Disorder of AlAs-AlGaAs-GaAs Quantum-Well Heterostructures", Journal of Electronic Materials, vol. 11(1), pp. 1-20 (1982).
J. P. Leburton et al., "Index of Refraction of AlAs-GaAs Superlattices", Journal of Applied Physics, vol. 54(7), pp. 4230-4231 (Jul. 1983).

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