Patent
1979-11-30
1982-11-09
James, Andrew J.
357 65, 357 68, H01L 2348, H01L 2946, H01L 2954
Patent
active
043587844
ABSTRACT:
An alloyed diode is formed of a silicon wafer which is sandwiched between two pre-clad molybdenum disks. The upper molybdenum disk is clad on the side facing the silicon wafer with a thin aluminum foil and is clad on its outer surface with a nickel foil. The bottom molybdenum is clad with a solder foil of silver containing small amounts of germanium, copper and arsenic on the surface facing the silicon and is clad with nickel on its opposite surface. The three parts are stacked atop one another and placed in an alloying furnace to form a completed semiconductor wafer with solderable electrodes on opposite sides.
REFERENCES:
patent: 2854612 (1958-09-01), Zaratkiewicz
patent: 3093882 (1963-06-01), Emeis
patent: 3184823 (1965-05-01), Little et al.
patent: 3184824 (1965-05-01), Fairbairn
patent: 3447236 (1969-06-01), Hatcher
patent: 3566209 (1971-02-01), Shaw
patent: 3620692 (1971-11-01), Franklin
patent: 4096510 (1978-06-01), Arai et al.
Roach Thomas J.
Wislocky Joseph
International Rectifier Corporation
James Andrew J.
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