Circular polarization spin semiconductor laser using...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S027000

Reexamination Certificate

active

10502542

ABSTRACT:
Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting/controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

REFERENCES:
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patent: 5874749 (1999-02-01), Jonker
patent: 6043515 (2000-03-01), Kamiguchi et al.
patent: 06-260725 (1994-09-01), None
patent: 9-219564 (1997-08-01), None
patent: 09-293924 (1997-11-01), None
patent: 10-321964 (1998-12-01), None
H. Yoshida et al.; Journal of the Crystallographic Society of Japan, vol. 27, No. 4, pp. 86-94. Cited in the int'l. search report.
K. Sato et al.; The Japan Society of Applied Physics, vol. 40, Part.2, No. 4A, pp. L334-L336, Apr. 1, 2001. Cited in the int'l. search report.
H. Ando et al.; Appl. Phys. Ltr. 73 (1998) 566. Cited in the specification.

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