Amplifiers – With semiconductor amplifying device – Including gain control means
Patent
1986-10-07
1988-08-23
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including gain control means
330149, 330145, 330305, 330306, 333 14, H03G 522
Patent
active
047663952
ABSTRACT:
The drain-source conductance of a wide variety of FETs can be made to conform to a predetermined function of a control signal. The control signal is multiplied by a factor and an offset is added or subtracted therefrom to derive a modified control signal. The modified control signal is then applied to the gate of a FET. The factor and the offset are such that the drain-source conductance of the transistor is substantially the predetermined function of the control signal. When a desired attenuator characteristic defined with respect to a FET is to be provided using a FET having characteristics different from those of the reference FET, the control signal to the FET used can be similarly modified so that the desired attenuator characteristics are obtained. A dual path compressor or expander employing an attenuator (which includes a FET) in its further path can be made to conform to a desired compression or expansion characteristic defined with respect to a similar arrangement and with respect to a reference FET conductance control characteristic. This can be accomplished by making the conductance control characteristics of the FET to be used to conform to the desired conductance control characteristic.
REFERENCES:
patent: 3710270 (1973-01-01), Addis et al.
patent: 4137466 (1979-01-01), Schemmel et al.
patent: 4223274 (1980-09-01), Paulke et al.
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