Circuits for wide input range analog rectification and correlati

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307355, 307490, 307498, 364819, H03B 1900

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active

053192680

ABSTRACT:
A first and a second MOS transistor of the same conductivity type are connected in series between a load and a fixed voltage source. The gates of the first and second MOS transistors are connected to sources of input voltage which are of a magnitude smaller than the threshold voltages of the two MOS transistors. The first MOS transistor located next to the load is kept in saturation. A related circuit includes a first and a second MOS transistor of the same conductivity type are connected in series between a load and a fixed voltage source. The first MOS transistor located next to the load is kept in saturation. The gates of the first and second MOS transistors are connected to the gates of third and fourth diode-connected MOS transistors of the same conductivity type as the first and second MOS transistors. The third MOS transistor is connected between a first input current node and a fixed voltage source. The fourth MOS transistor is connected between a second input current node and a fixed voltage source. The third and fourth MOS transistors may alternatively be connected to first and second input transistors and a bias transistor arranged as in a differential amplifier. At least one diode-connected transistor is included in series with at least one of the transistors which has a gate connected to an input voltage.

REFERENCES:
patent: 4375039 (1983-02-01), Yamauchi
patent: 4399374 (1983-08-01), Boeke
patent: 4460837 (1984-07-01), Anderson, Jr.
patent: 4464588 (1984-08-01), Wieser
patent: 4634894 (1987-01-01), Shu et al.
patent: 4724344 (1988-02-01), Watanabe
patent: 4941027 (1990-07-01), Beason
patent: 5065043 (1991-11-01), Bartling et al.

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