Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-02-14
1998-10-20
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257355, H01L 2900
Patent
active
058250727
ABSTRACT:
A static-charge protection device for an antifuse includes an additional second-sized aperture smaller in area than the antifuse apertures disposed in the same inter-electrode dielectric layer. Antifuse material is disposed in the second-sized aperture, and the upper electrode extends over the second aperture as well as the first aperture. A preferred process for fabricating the protection device utilizes the step of forming the smaller apertures and forming their antifuse material layers simultaneously with forming the antifuse apertures.
A static-charge protection device for an antifuse device includes an additional second-sized aperture larger in area than the first-sized antifuse apertures. Metal plug material is deposited and etched back. A layer of amorphous silicon antifuse material is formed and defined over the first and second sized apertures, the portion formed over the larger partially filled antifuse protection device cell being thinner.
REFERENCES:
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 3787822 (1974-01-01), Rioult
patent: 4072976 (1978-02-01), Harari
patent: 4420820 (1983-12-01), Preddy
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4651409 (1987-03-01), Ellworth et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4751197 (1988-06-01), Wills
patent: 4786956 (1988-11-01), Puar
patent: 4796075 (1989-01-01), Whitten
patent: 4821096 (1989-04-01), Maloney
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4823350 (1989-04-01), Miller
patent: 4829350 (1989-05-01), Miller
patent: 4847732 (1989-07-01), Stopper et al.
patent: 4851364 (1989-07-01), Yatsuda et al.
patent: 4862243 (1989-08-01), Welch et al.
patent: 4866001 (1989-09-01), Pickett et al.
patent: 4868138 (1989-09-01), Chan et al.
patent: 4870302 (1989-09-01), Freeman
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4912066 (1990-03-01), Wills
patent: 4912342 (1990-03-01), Wong et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4933576 (1990-06-01), Tamamura et al.
patent: 4941028 (1990-07-01), Chen et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5075762 (1991-12-01), Kondo et al.
patent: 5093711 (1992-03-01), Hirakawa
patent: 5095362 (1992-03-01), Roesner
patent: 5100827 (1992-03-01), Lytle
patent: 5111262 (1992-05-01), Chen et al.
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5134457 (1992-07-01), Hamdy et al.
patent: 5163180 (1992-11-01), Eltoukhy et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5191550 (1993-03-01), Kubota
patent: 5194759 (1993-03-01), El-Ayat et al.
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5208177 (1993-05-01), Lee
patent: 5219982 (1993-06-01), Buijsingh et al.
patent: 5233206 (1993-08-01), Lee et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5241496 (1993-08-01), Lowrey et al.
patent: 5242851 (1993-09-01), Choi
patent: 5248632 (1993-09-01), Tung et al.
patent: 5250459 (1993-10-01), Lee
patent: 5266829 (1993-11-01), Hamdy et al.
patent: 5270251 (1993-12-01), Cohen
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5284788 (1994-02-01), Spratt et al.
patent: 5286993 (1994-02-01), Lowrey et al.
patent: 5290734 (1994-03-01), Boardman et al.
patent: 5293133 (1994-03-01), Birkner et al.
patent: 5298784 (1994-03-01), Gambino et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5302508 (1994-04-01), Cohen
patent: 5302546 (1994-04-01), Gordon et al.
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5327024 (1994-07-01), Cox
patent: 5328865 (1994-07-01), Boardman et al.
patent: 5329153 (1994-07-01), Dixit
patent: 5332929 (1994-07-01), Chiang
patent: 5341267 (1994-08-01), Whitten et al.
patent: 5353246 (1994-10-01), Tsang et al.
patent: 5369054 (1994-11-01), Yen et al.
patent: 5381035 (1995-01-01), Chen et al.
patent: 5387311 (1995-02-01), Hall et al.
patent: 5390141 (1995-02-01), Cohen et al.
patent: 5391513 (1995-02-01), Delgado et al.
patent: 5391518 (1995-02-01), Bhushan
patent: 5395797 (1995-03-01), Chen et al.
patent: 5403778 (1995-04-01), Kwok et al.
patent: 5404029 (1995-04-01), Husher et al.
patent: 5412245 (1995-05-01), Favreau
patent: 5412593 (1995-05-01), Magel et al.
patent: 5482884 (1996-01-01), McCollum et al.
patent: 5485031 (1996-01-01), Zhang et al.
patent: 5498895 (1996-03-01), Chen
patent: 5519248 (1996-05-01), Yan et al.
patent: 5571741 (1996-11-01), Leedy
patent: 5610790 (1997-03-01), Staab et al.
patent: 5623387 (1997-04-01), Li et al.
patent: 5659182 (1997-08-01), Cohen
patent: 5689133 (1997-11-01), Li et al.
Cohen et al., "A Flat-Aluminum Based Voltge-Programmable Link for Field-Programmable Devices", IEEE Transactions on Electro Devices, vol. 41, No. 5, May 1994, pp. 721-724.
Gordon et al., "Conducting Filament of the Programmed Metal Electrode Amorphous Silicon Antifuse", 1993 IEEE, IEDM, pp. 93-27 to 93-30.
Hu, C., "Interconnect Devices for Field programmable Gate Array", 1992 IEEE, IEDM, pp. 92-591 to 92-594.
Pauleau, Y., "Interconnect Materials for VLSI Circuits", Solid State Technology, Apr., 1987, pp. 155-162.
Chen, et al., "A Sublithographic Antifuse Structure for Field-Prigrammable Gate Array Applications," IEEE Electronic Device Letters,vol. 13, No. 1, pp. 53-55.
Gordon, et al., "Conducing Filament of the Programmed Metal Electrode Amorphous Silicon Antifuse," IEEE 1993, pp. 27-30.
Rountree, Robert, "ESD Protection for Submicron CMOS Circuits: Issues and Solutions," Proceedings of the Electron Devices, Meeting (Dec. 11-14, 1988) San Francisco, CA.
Chen Wenn-Jei
Chiang Steve S.
Forouhi Abdul Rahim
Yen Yeochung
Actel Corporation
Carroll J.
LandOfFree
Circuits for ESD Protection of metal to-metal antifuses during p does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuits for ESD Protection of metal to-metal antifuses during p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuits for ESD Protection of metal to-metal antifuses during p will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-247432