Circuits and methods for providing low voltage, high...

Static information storage and retrieval – Floating gate – Disturbance control

Reexamination Certificate

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C365S185160

Reexamination Certificate

active

11089941

ABSTRACT:
Circuits and methods are provided to implement low voltage, higher performance semiconductor memory devices such as CMOS static random access memory (SRAM) or multi-port register files. For example, circuits and methods are provided for dynamically adjusting power supply and/or ground line voltages that are applied to the memory cells during different modes of memory operation to enable low voltage, high performance operation of the memory devices.

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