Circuitry for image sensors with avalanche photodiodes

Details Circuitry for image sensors with avalanche photodiodes Circuitry for image sensors with avalanche photodiodes

2006-10-03

2006-10-03

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31001

Reexamination Certificate

active

07115963

ABSTRACT:
In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are fabricated on thin-film silicon-on-insulator substrates.

REFERENCES:
patent: 6858912 (2005-02-01), Marshall et al.
patent: 1006591 (2000-06-01), None
patent: 9008744 (1997-05-01), None
patent: 11 055194 (1999-05-01), None

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