Circuitry for controlling a threshold voltage in a flash memory

Details Circuitry for controlling a threshold voltage in a flash memory Circuitry for controlling a threshold voltage in a flash memory

1996-12-19

1998-02-24

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

3651852, 36518533, G11C 1606

Patent

active

057217050

ABSTRACT:
The circuit for controlling the threshold voltage in the flash memory cell according to the present invention comprises a circuit for generating a first voltage depending on the amount of a drain current in the memory cell; a first element for comparing the first voltage with a reference voltage and for generating a second voltage; and a second element for supplying a control gate voltage for the control gate of the memory cell depending on the second voltage.

REFERENCES:
patent: 5200919 (1993-04-01), Kaya
patent: 5359558 (1994-10-01), Chang et al.
patent: 5396468 (1995-03-01), Harari et al.
patent: 5526315 (1996-06-01), Kaya et al.
patent: 5566111 (1996-10-01), Choi
patent: 5596528 (1997-01-01), Kaya et al.

Affiliated with

Also associated with

Rating

Circuitry for controlling a threshold voltage in a flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuitry for controlling a threshold voltage in a flash memory , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuitry for controlling a threshold voltage in a flash memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1879030