Circuitry and structures for electrostatic discharge protection

Details Circuitry and structures for electrostatic discharge protection Circuitry and structures for electrostatic discharge protection

1993-09-30

1996-04-09

Deboer, Todd

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

361 91, 361111, H02H 904

Patent

active

055067425

ABSTRACT:
Circuitry (10) and structures (30) are provided for electrostatic discharge protection. A first bipolar transistor (Q1) has a collector electrically coupled to a first node (12), a base electrically coupled to a second node, and an emitter electrically coupled to a third node (14). A second bipolar transistor (Q2) has a collector, a base electrically coupled to the second node, and an emitter electrically coupled to the first node (14). The second bipolar transistor (Q2) supplies a base current to the base of the first bipolar transistor (Q1) in response to the first node (12) reaching a threshold voltage relative to the third node (14), so that the first bipolar transistor (Q1) conducts current between the first (12) and third (14) nodes in response to the base current.

REFERENCES:
patent: 5196981 (1993-03-01), Kuo
patent: 5335132 (1994-08-01), DeShazo, Jr.
patent: 5400202 (1995-03-01), Metz et al.

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