Circuitry and method for programming and erasing a non-volatile

Static information storage and retrieval – Magnetic bubbles – Guide structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365218, G06F 1200, G11C 700

Patent

active

054487129

ABSTRACT:
Erase control circuitry for erasing a flash memory array. The erase control circuitry resides on the same substrate as the flash memory array, along with a command state machine. The command state machine recognizes and externally generated erase command applied to the terminals and generates an active erase control signal, to which the erase control circuitry responds. The erase control circuitry includes precondition pulse application circuitry, erase pulse application circuitry and erase verification circuitry. The precondition pulse application circuitry preconditions the array by programming each bit in the flash memory to a threshold voltage level representative of a programmed state. The erase pulse application circuitry applies a single erase pulse at a time to the flash memory array to erase the flash array by bringing the threshold voltage level of each cell in the array to a level representative of an erased state. The erase verification circuitry verifies the erasure of the flash memory array on a byte by byte basis. If the byte currently being verified has been erased; the erase verification circuitry brings a match signal to an active level. The erase control circuitry determines whether additional erase pulses should be applied to the flash array based upon the match signal and the number of erase pulses previously applied to the flash array described is program control circuitry and methods of programming and erasing a flash memory array in response to two step command sequences.

REFERENCES:
patent: 4460982 (1984-07-01), Gee et al.
patent: 4521853 (1985-06-01), Guttlag
patent: 4648076 (1987-03-01), Schrenk
patent: 4701886 (1987-10-01), Sakakibara et al.
patent: 4811294 (1989-03-01), Kobayashi et al.
patent: 4821240 (1989-04-01), Nakamura et al.
patent: 4823308 (1989-04-01), Knight
patent: 4974208 (1990-11-01), Nakamura et al.
patent: 5014191 (1991-05-01), Padgaonkar et al.
patent: 5034922 (1991-07-01), Burgess
patent: 5053990 (1991-10-01), Kreifels et al.
patent: 5070443 (1991-12-01), Priem et al.
patent: 5097445 (1992-03-01), Yamauchi
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5222046 (1993-06-01), Kreifels et al.
patent: 5307470 (1994-04-01), Kataoka et al.
28F256, Memory Components Handbook, pp. 5-2-5-11 (Intel 1990).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Circuitry and method for programming and erasing a non-volatile does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuitry and method for programming and erasing a non-volatile , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuitry and method for programming and erasing a non-volatile will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-480622

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.