Circuit with monolitically integrated p-i-n/Schottky diode arran

Details Circuit with monolitically integrated p-i-n/Schottky diode arran Circuit with monolitically integrated p-i-n/Schottky diode arran

1996-08-19

1998-05-19

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257485, H01L 31075

Patent

active

057539600

ABSTRACT:
A monolithically integrated circuit for carrying out different mixer and switch functions includes: at least one p-i-n diode and at least one Schottky diode monolithically integrated in the circuit. The p-i-n diode and Schottky diode are made from a common semiconductor layer sequence. The semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers.

REFERENCES:
patent: 3586929 (1971-06-01), Burmeister et al.
patent: 4249134 (1981-02-01), Stacey
patent: 4640003 (1987-02-01), Papanicolaou
patent: 4836650 (1989-06-01), Morin et al.
patent: 4982269 (1991-01-01), Calligaro
patent: 5102822 (1992-04-01), Calligaro
patent: 5242839 (1993-09-01), Oh et al.
patent: 5272370 (1993-12-01), French

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