Circuit with hot electron protection and method

Details Circuit with hot electron protection and method Circuit with hot electron protection and method

1997-09-09

1999-09-14

Le, Dinh

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327546, 327538, 327108, 326 81, 326 83, H01L 2706

Patent

active

059528753

ABSTRACT:
An I/O circuit whose output receives a voltage V.sub.PAD which is temporarily higher than a critical voltage V.sub.DS MAX >V.sub.DS 1 across drain and source of a conducting first N-FET (110, N1) acting as a pull-down device. The first N-FET is protected against hotelectron induced degradation by a serially coupled second N-FET (130, N3). A variable drain-source voltage V.sub.DS 3 is added to V.sub.DS 1. A comparator (150) compares the received voltage V.sub.PAD to a supply voltage V.sub.CC and pulls a gate (G) of the second N-FET (N3) to V.sub.PAD or to V.sub.CC. The conductivity of the second N-FET (N3) is thereby changed so that VPAD is distributed among V.sub.DS 1 and V.sub.DS 2. The comparator (150) conveniently comprises two P-FETs (P1, P2, 160, 170).

REFERENCES:
patent: 5381061 (1995-01-01), Davis
patent: 5444397 (1995-08-01), Wong et al.
patent: 5570043 (1996-10-01), Churchill
patent: 5666069 (1997-09-01), Gibbs

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