Circuit with hot-electron protection and method

Details Circuit with hot-electron protection and method Circuit with hot-electron protection and method

1997-04-14

1999-10-05

Cunningham, Terry D.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

327 17, 327327, 327437, H03K 508

Patent

active

059630760

ABSTRACT:
In a circuit (10), a first N-FET (N1) and a second N-FET (N2) are coupled serially between a node (15) and ground (93). The circuit (10) accommodates a first excursion (85) of a first signal (IN) at the gates of the first N-FET (N1) which is higher than the maximum allowable drain-source voltage for N-FETs. The voltage of a second signal (OUT) between the node (15) and ground (93) is distributed across the first and the second N-FETs (N1, N2). The gate voltage of the second N-FET (N2) is not constant, but controlled by a control circuit (20) receiving signals the first signal (IN) and, optionally, the second signal (OUT). With the variation of the gate voltage for the second N-FET (N2), the size of both transistors (N1, N2) can be reduced and the fall time (T.sub.F) of the second signal (OUT) can be reduced.

REFERENCES:
patent: 4199695 (1980-04-01), Cook et al.
patent: 4347447 (1982-08-01), Proebsting
patent: 4521698 (1985-06-01), Taylor
patent: 4779013 (1988-10-01), Tanaka
patent: 4900955 (1990-02-01), Kurpan
patent: 4956569 (1990-09-01), Olivo et al.
patent: 5054001 (1991-10-01), Guillot
patent: 5157280 (1992-10-01), Schreck et al.
patent: 5347179 (1994-09-01), Casper et al.
patent: 5493244 (1996-02-01), Pathak et al.
patent: 5629645 (1997-05-01), Okajima et al.
patent: 5650742 (1997-07-01), Hirano
patent: 5748025 (1998-05-01), Ng et al.
patent: 5767728 (1998-06-01), Michail et al.
Dr.-Ing. Ulrich Tietze, "Halbleiter-Schaltungstechnik", ISBN 3-540-56184-6 10.Aufl. Springer-Verlag Berlin Heidelbert New York, 1993, pp. 213-218.
Jerry C. Whitaker, "The Electronics Handbook", 1996 by CRC Press, Inc., pp. 679-683.
Yusuf Leblebici , "Design Considerations for CMOS Digital Circuits with improved hot-carrier reliability" in IEEE Journal of solid-state Circuits, vol. 31, No. 7, Jul. 1996, pp. 1014-1024.

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