Circuit with diode-protected emitter resistors

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257543, 257568, 330254, 330255, 330257, 330261, H01L 2972, H01L 2702

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active

054019958

ABSTRACT:
An operational amplifier, of a type which comprises a differential cell transconductor input stage (2) incorporating a current mirror (5) provided with a pair of degenerative resistors (R9,R10) and a gain stage (7), driven directly by a transistor (Q12) of said mirror (5), has each degenerative resistor (R9,R10) formed within an epitaxial well wherewith a parasitic diode (D1,D2) is associated. Each diode (D1,D2) is connected in parallel with its corresponding resistor (R9,R10) to prevent the transistor (Q12) which drives the gain stage (7) from becoming saturated.

REFERENCES:
patent: 4413237 (1983-11-01), Baba
patent: 4463319 (1984-07-01), Kearney
patent: 4547743 (1985-10-01), Goto
patent: 4607232 (1986-08-01), Gill, Jr.
patent: 4871977 (1989-10-01), Schilling et al.
patent: 4929910 (1990-05-01), Pace et al.
patent: 5142242 (1992-08-01), Schaffer
patent: 5168243 (1992-12-01), Feliz et al.
patent: 5168244 (1992-12-01), Muranaka
Instruments and Experimental Techniques, vol. 21, No. 2, Mar. 1978, New York US, pp. 429-430; N. N. Prokopenko `Differential Operational Amplifier with Improved Response Time` *the whole document*.
Patent Abstracts of Japan, vol. 13, No. 439 (E-827) Oct. 3, 1989 & JP-A-11 68 052 (Mitsubishi Electric Corp.) Jul. 3, 1989 *abstract*.
Patent Abstracts of Japan, vol. 15, No. 054 (E-1031) Feb. 8, 1991 & JP-A-22 83-070 (Fuji Electric Co) Nov. 20, 1990 *abstract*.

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