Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-07-30
1995-03-28
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257543, 257568, 330254, 330255, 330257, 330261, H01L 2972, H01L 2702
Patent
active
054019958
ABSTRACT:
An operational amplifier, of a type which comprises a differential cell transconductor input stage (2) incorporating a current mirror (5) provided with a pair of degenerative resistors (R9,R10) and a gain stage (7), driven directly by a transistor (Q12) of said mirror (5), has each degenerative resistor (R9,R10) formed within an epitaxial well wherewith a parasitic diode (D1,D2) is associated. Each diode (D1,D2) is connected in parallel with its corresponding resistor (R9,R10) to prevent the transistor (Q12) which drives the gain stage (7) from becoming saturated.
REFERENCES:
patent: 4413237 (1983-11-01), Baba
patent: 4463319 (1984-07-01), Kearney
patent: 4547743 (1985-10-01), Goto
patent: 4607232 (1986-08-01), Gill, Jr.
patent: 4871977 (1989-10-01), Schilling et al.
patent: 4929910 (1990-05-01), Pace et al.
patent: 5142242 (1992-08-01), Schaffer
patent: 5168243 (1992-12-01), Feliz et al.
patent: 5168244 (1992-12-01), Muranaka
Instruments and Experimental Techniques, vol. 21, No. 2, Mar. 1978, New York US, pp. 429-430; N. N. Prokopenko `Differential Operational Amplifier with Improved Response Time` *the whole document*.
Patent Abstracts of Japan, vol. 13, No. 439 (E-827) Oct. 3, 1989 & JP-A-11 68 052 (Mitsubishi Electric Corp.) Jul. 3, 1989 *abstract*.
Patent Abstracts of Japan, vol. 15, No. 054 (E-1031) Feb. 8, 1991 & JP-A-22 83-070 (Fuji Electric Co) Nov. 20, 1990 *abstract*.
Erratico Pietro
Lari Ferdinando
Groover Robert
Ngo Ngan Van
SGS-Thomson Microelectronics S.R.L.
LandOfFree
Circuit with diode-protected emitter resistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit with diode-protected emitter resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit with diode-protected emitter resistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2252661