Circuit using insulated-gate field-effect transistors

Details Circuit using insulated-gate field-effect transistors Circuit using insulated-gate field-effect transistors

1979-05-22

1982-05-18

La Roche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 307578, H03K 17687

Patent

active

043307191

ABSTRACT:
The invention provides for maintaining a charged node point at the potential level of a power source, when the potential must be dynamically sustained. This is done by a circuit using insulated-gate, field-effect transistors. Preferably, two such transistors are used in conjunction with a bootstrap capacitor which changes the potential of a signal appearing at a circuit node responsive to any leaking of current at an output, which might otherwise cause the node potential to drift down to a lower level.

REFERENCES:
patent: 3663835 (1972-05-01), Hoffman
patent: 3743862 (1973-07-01), Bell

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