Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-03-05
2010-12-07
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185190, C365S189060, C365S189090
Reexamination Certificate
active
07848151
ABSTRACT:
A programming circuit and method to apply a controlled or predetermined voltage pulse for charge transfer to or from the floating gate of a non-volatile memory cell in an incremental manner to control the overall voltage across the gate oxide. Voltage above a transfer threshold voltage, such as above a tunneling threshold voltage, is applied in a stepwise charge transfer manner to or from the floating gate up to a voltage limit that is below the thin oxide damage threshold. Controlling the overall voltage avoids oxide breakdown and enhances reliability.
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“U.S. Appl. No. 11/291,606, Notice Of Allowance Mailed On Nov. 17, 2008”, 9 Pgs.
“U.S. Appl. No. 11/291,606, Response filed Mar. 17, 2008 to Final Office Action mailed Jan. 16, 2008”, 14 pages.
Chan Johnny
Ng Philip S.
Renninger Alan L.
Son Jinshu
Tsai Jeffrey M.
Atmel Corporation
Pham Ly D
Schwegman Lundberg & Woessner, P.A.
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