Circuit substrate having improved connection reliability and...

Details Circuit substrate having improved connection reliability and... Circuit substrate having improved connection reliability and...

2005-08-16

2005-08-16

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S775000, C428S098000, C174S068100

Reexamination Certificate

active

06930395

ABSTRACT:
A connecting strength at a bonding site between a wiring layer1cand a conductor1dis enhanced by comparing a bonding strength between a wiring layer14provided by covering the conductor1don an insulating base1aand the conductor1dwith a bonding strength between the wiring layer1cand the insulating base1ain an adjacency of the conductor to set the latter relatively lower.

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Chang et al., Internal Stress and Connection Resistance Correlation Study of Microbump Bonding, Sep. 2001, IEEE, vol. 24 No. 3, 493-499.

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