Patent
1989-12-18
1991-02-19
Hille, Rolf
357 80, 357 74, 357 65, H01L 2302, H01L 3902, H01L 2312, H01L 2348
Patent
active
049949039
ABSTRACT:
A circuit having a semiconductor device therein has a novel and improved circuit substrate comprising a layer of organic electrically insulating material having a layer of metal of relatively high electrical conductivity adhered to and supported on one side of the organic material layer forming electrically conductive circuit paths and forming a pad mounting the semiconductor device. A heat sink metal layer is adhered to and supported on an opposite side of the organic material layer for withdrawing heat from the semiconductor device. A multiplicity of particles of materials of relatively higher thermal conductivity than the organic layer material is dispersed in the organic material for enhancing heat withdrawal from the semiconductor device, and the heat-sink metal layer comprises a layer of a first metal of relatively low coefficient of thermal expansion having a plurality of apertures in therethrough and a second metal of relatively much higher thermal conductivity which is disposed in the apertures and on the opposite sides of the low expansion layer and which is metallurgically bonded to the low expansion layer material. The first and second metals in the heat-sink layer provide the heat-sink layer with heat-transferring properties and with an effective coefficient of thermal expansion which cooperates with the particles enhancing heat withdrawal from the semiconductor device for conducting withdrawn heat through the heat-sink layer to be rapidly dissipated while also providing improved reliability in the mounting and interconnection of the semiconductor device and the circuit during such enhanced heat withdrawal from the circuit.
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Breit Henry F.
Wroe Thomas
Haug John A.
Hille Rolf
McAndrews James P.
Ostronski D. M.
Sharp Melvin
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