Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2007-05-11
2010-10-26
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S297000, C257S422000
Reexamination Certificate
active
07821110
ABSTRACT:
Back end of line (BEOL) circuit structures and methods are provided for blocking externally-originating or internally-originating electromagnetic interference. One such BEOL circuit structure includes one or more semiconductor substrates supporting one or more integrated circuits, and one or more BEOL layers disposed over the semiconductor substrate(s). At least one BEOL layer includes a conductive pattern defined at least partially by a plurality of elements arrayed in a first direction and a second direction throughout at least a portion thereof. The plurality of elements are sized and positioned in at least one of the first and second directions to block electromagnetic interference of a particular wavelength from passing therethrough. In one implementation, a first conductive pattern of a first BEOL layer polarizes electromagnetic interference, and a second conductive pattern of a second BEOL layer blocks the polarized electromagnetic interference.
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Cho Choongyeun
Kim Dae Ik
Kim Jong-hae
Kim Moon Ju
Heslin Rothenberg Farley & & Mesiti P.C.
Ida Geoffrey
International Business Machines - Corporation
Le Thao X
Radigan, Esq. Kevin P.
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