Circuit structure with an anti-reflective layer

Details Circuit structure with an anti-reflective layer Circuit structure with an anti-reflective layer

1997-06-06

2000-03-28

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257435, 257629, 257766, 438 72, 438952, H01L 310232, H01L 2358, H01L 2348, H01L 2352

Patent

active

06043547&

ABSTRACT:
An antireflection coating (116) for use in fabricating integrated circuits and electronic devices comprises a film of chromium oxide, CrO, or chromium suboxide, CrO.sub.x where x<1. An antireflection layer reduces the standing waves and topographic notching in a photoresist layer (118) when applied over a highly reflective layer (114). Highly reflective layers may be metals, such as aluminum or gold, silicides, or semiconductors, such as silicon. These coatings are preferably made by reactive sputtering of a chromium target with a partial pressure of oxygen in the sputtering chamber. The antireflection layer works primarily by absorptive, rather than wave matching, principles. This antireflection layer exhibits good adhesion and may be integrated into the device. Integrating the layer into the device may reduce stress in the underlying layers and improve device yields and reliability.

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H.A.M. van den Berg and J.B. van Staden, Antireflectin Coatings on Metal Layers for Photolithographic Purposes, J.Appl.Phys. 50(3), 1212-1214, Mar. 1979.

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