Circuit structure having at least one capacitor and a method for

Details Circuit structure having at least one capacitor and a method for Circuit structure having at least one capacitor and a method for

1995-11-13

1998-06-02

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438243, H01L 2120

Patent

active

057599033

ABSTRACT:
A circuit structure having at least one capacitor and a method for the manufacture thereof. The capacitor is constructed of a doped, single-crystal silicon substrate (1) that is provided with a plurality of hole openings (3) by electrochemical etching in a fluoride-containing, acidic electrolyte wherein the substrate is connected as an anode. The capacitor is further constructed of a dielectric layer (4) and of a conductive layer (5) as a cooperating electrode.

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Morie et al, "Depletion Trench Capacitor Technology for Megabit Level MOS dRAM.", IEEE Electron. Device LeHors, vol. EDL-4, No. 11 Nov. 19 83 pp. 411-413.

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