Circuit structure having a lateral bipolar transistor and its me

Details Circuit structure having a lateral bipolar transistor and its me Circuit structure having a lateral bipolar transistor and its me

1990-04-16

1991-09-10

James, Andrew J.

Fishing, trapping, and vermin destroying

357 35, 437 32, 437 33, H01L 21265

Patent

active

050478230

ABSTRACT:
A circuit structure contains at least one bipolar transistor whose emitter is fashioned as a part of a doped silicon layer grown on a substrate. The doped silicon layer comprises a sidewall extending parallel to its surface normal, the sidewall being covered with a doped silicon structure in contact with the silicon substrate and forms the base of the bipolar transistor. The bipolar transistor comprises a self-aligned, effective emitter with a 50-500 nm.

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Berger, "Method of Producing a Lateral Transistor", IBM TDB, vol. 23, No. 3, Aug./80, pp. 1089-1090.
Arimoto, Y. et al., "Pulse-Field-Assisted Bonding for SOI Devices," 46th Dev. Res. Conf., 1088, Boulder, Colo., p. IA-6.
Werner, W. M. et al., "Modern Bipolar Technology for Gate Array and Memory Applications," Siemens Forsch-u. Entwick, vol. 17, No. 5, 1988, pp. 221-226.
Haisma, J., "SOI Technologies: Their Past, Present and Future", Journal de Physique, vol. 49, C4, Supp. No. 9, 1988, pp. C4-3-C4-12.

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